Versione delle 02:00, 28 gen 2013 modifica DarafshBot (discussione \| contributi) 3 919 modifiche m r2.7.1) (Bot: Modifico fa:برآرایی ← Differenza precedente		Versione delle 00:17, 24 feb 2013 modifica annulla ValterVBot (discussione \| contributi) Bot 613 055 modifiche m Bot: Elimino interlinks vedi Wikidata Differenza successiva →
Riga 11: [[Categoria:Semiconduttori]] ~~[[ar:تنضيد]]~~ ~~[[bg:Епитаксия]]~~ ~~[[ca:Epitàxia]]~~ ~~[[cs:Epitaxe]]~~ ~~[[de:Epitaxie]]~~ ~~[[en:Epitaxy]]~~ ~~[[es:Epitaxia]]~~ ~~[[fa:برآرایی]]~~ ~~[[fr:Épitaxie]]~~ ~~[[ja:エピタキシャル成長]]~~ ~~[[nl:Epitaxie]]~~ ~~[[no:Epitaksi]]~~ ~~[[pl:Epitaksja]]~~ ~~[[pt:Epitaxia]]~~ ~~[[ru:Эпитаксия]]~~ ~~[[uk:Епітаксія (технологія)]]~~ ~~[[zh:外延 (晶体)]]~~

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